JetFleet G18

Next-Generation Power Electronics

A NEW ERA POWERED BY GaN

Gallium Nitride technology delivers unprecedented efficiency, reliability, and performance for personal electric vehicles.

GaN
Dramatically Less Heat
10x
Lower Dead Time vs MOSFET
100kHz
Switching, No Problem
JetFleet G18 GaN ESC — front view of the controller board
// Why GaN

What GaN Enables

Dramatically Less Heat
GaN wastes far less energy as heat than silicon — at every load point.

Less wasted energy = more range from the same battery.
Thermal image showing GaN ESC running cool under 150A load
Smaller & Lighter
Dramatically less heat means smaller heatsink — or none at all. Compact controller that fits where silicon-based designs can't.
Faster Switching
GaN switches orders of magnitude faster than silicon — virtually eliminating dead time distortion. Less motor vibration, less noise, smoother throttle response.
Higher Switching Frequency
GaN can switch at MHz frequencies — orders of magnitude beyond what silicon can practically achieve. Can eliminate electrolytic capacitors for better long-term reliability.
80kHz PWM waveform from GaN ESC showing clean high-frequency switching
Lower Switching Losses
Lower capacitance + faster switching = dramatically less energy wasted per transition. Less heat in the controller, more power to the motor.
Thermally Stable
GaN stays stable as temperature rises — silicon MOSFETs don't. In silicon, a hot spot draws more current, which makes it hotter, which draws even more current — until the device burns up. This is called the Spirito effect. GaN has none of it, making it inherently safe to parallel at high currents.
Zero Reverse Recovery
No parasitic body diode means zero reverse recovery charge — eliminating one of the largest sources of switching loss and voltage spikes in silicon MOSFETs.
Built to Last
Wide bandgap material — inherently more tolerant to heat and voltage stress. No avalanche breakdown — GaN degrades gracefully under overvoltage instead of failing catastrophically like silicon. Proven technology — tens of millions of GaN devices shipped and operating in the field.
// High-Power Motor Drives

10x Shorter Dead Time

🔇
10x
Shorter Dead Time
MOSFET 1000 ns
→
GaN 24 ns
Enables cleaner motor operation — measured by JetFleet.
MOSFET — 1000ns Dead Time
Oscilloscope waveform showing distorted MOSFET output with 1000ns dead time
Distorted & Noisy
GaN — 24ns Dead Time
Oscilloscope waveform showing clean GaN sine wave output with 24ns dead time
Clean Sine Wave
"With gallium nitride and with a 24 nanosecond dead time which is achievable only with gallium nitride it's possible to get really really silent operation."
— EPC, DigiKey Motor Drive Webinar
// Built to Last

Unmatched Reliability

Atomic Advantage
Stronger Crystal Bonds
GaN's gallium-nitrogen bonds are fundamentally stronger than silicon's atomic structure. Wide bandgap material inherently more tolerant to heat and voltage stress.
No Spirito Effect
No Thermal Runaway
In silicon, hotter = draws more current = gets even hotter = burns up. GaN doesn't do this. Threshold voltage remains stable with temperature.
Graceful Degradation
No Avalanche Breakdown
GaN degrades gracefully under overvoltage instead of failing catastrophically like silicon. Full recovery, no permanent damage.
Proven at Scale
Tens of Millions Shipped
GaN technology is field-proven across tens of millions of devices — from AI datacenters to satellites to consumer electronics.
"In our lifetimes GaN will not wear out except for thermal-mechanical effects which are the same ones you have in any semiconductor component."
— Alex Lidow, CEO of EPC
JetFleet G18 GaN ESC — product overview

Power Your Ride
with GaN

Dramatically less heat. Ultra-short dead time. Cleaner power delivery.
The technology that powers AI, space, and robotics — now in your PEV.

GaN
Less Heat, More Range
10x
Lower Dead Time vs MOSFET
100kHz
Switching, No Problem
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